| PART |
Description |
Maker |
| S6302 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| S4108 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2305-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2206 S2206-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| 5SMX12L2511 |
IGBT-Die 54 A, 2500 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
|
| 5SMX12M1701 |
IGBT-Die
|
ABB Semiconductors
The ABB Group
|
| 5SMY12M1200 |
IGBT-Die
|
The ABB Group
|
| 5SMX12H1251 |
IGBT-Die
|
ABB
|
| 5SMX12M1273 |
IGBT-Die
|
The ABB Group
|
| 5SMX12H1273 |
IGBT-Die
|
The ABB Group
|
